繁體中文 English Measuring NEP Parameters of Photodetectors with Enlitech New Type Photodetector Characterization Analyzer PD-QE The noise equivalent power (NEP) of a photodetector is one
繁體中文 English News- New Optoelectronic Sensing Research Booming, PD-RS for Photodetector&Photodiode Response Time Characterisation rise/fall time test Research on optoelectronic devices such as organic photodiode (OPD), quantum dots photodiode (QDPD), perovskite photodiode
繁體中文 English (英語) Introduction to Quantum Efficiency Spectrum and Common CMOS Image Sensor Process Defects This article will introduce what is quantum efficiency spectrum and
繁體中文 (Chinese (Traditional)) English 한국어 (Korean) New technology for backside polishing of silicon wafers in back-illuminated CMOS image sensor processes A research team composed of
內容 繁體中文 (Chinese (Traditional)) English 한국어 (Korean) What is the difference between Enlitech SG-A quantum efficiency measurement and traditional CIS defect detection? 內容 Conventional methods
Headquarter
1F., No.96, Luke 5th Rd., Luzhu Dist., Kaohsiung City 821011 Taiwan
Email: qeservice@enli.com.tw
TEL:
+886-7-6955669(Gobal)
+1-929- 586-296(USA)
Shanghai Branch
Room 2A, Building 3, No. 100, Lane 1505, Zuchongzhi Road, Zhangjiang Town, Pudong New District, Shanghai, China
TEL: +86-21-31338780
Support
Investor area
Corporate Social Responsibility
